Photoluminescence (PL) describes light spontaneously emitted from a material under optical excitation.
PL is studied to characterize a variety of semiconductor material parameters, including bandgap energy, surface quality, and defects.
Experiments are reasonably simple to conduct; optical excitation is nondestructive, and samples therefore require minimal preparation or environmental control.
The incorporation of temperature control capability or transient-sensitive detection capability can furthur enhance the wealth of information available experimentally.
Three PL systems are available to CEDT members, suiting a range of conditions.
A low-temperature PL (LTPL) system with a Nd:YAG laser source is located in TAB 205. A low-temperature PL (FTIR-PL) system with FTIR spectrometer analyzer and Argon Ion laser source is located in TAB 110/A. A room-temperature PL (RTPL) system with a HeNe laser source is located in TAB 110/A.